808nm High Power TO Laser Diode
Product Features:
(Model: QTFPL-8081000T5FW1)
Output power: 1000mW
Efficient quantum well structure
Center Wavelength: 808 nm
Package: TO-5 ( 9mm)
Parameters
Outline Drawings
Pin Assignment
Ordering Information
Absolute Maximum Ratings (T=25 ℃)
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability.
Parameter | Symbol | Unit | Min | Max | Note |
Reverse Voltage | Vr | V | - | 2 | - |
Operating Temperature | To | ℃ | -10 | 30 | - |
Storage Temperature | Tstg | ℃ | -10 | 85 | - |
Solder Reflow Temperature | Stemp | ℃ | - | 260 | 10 seconds max |
Electro-Optical Characteristics (T=25 ℃)
Parameter | Symbol | Unit | Min | Typ | Max | Test Condition |
Optical Output Power | Po | mW | 1000 | - | - | Iop=1300mA |
Center Wavelength | λc | Nm | 803 | 808 | 813 | Po=1000mW |
Spectral Width | Δλ | nm | - | - | 5 | FWHM. Po=1000mW |
Threshold Current | Ith | mA | - | 200 | 250 | - |
Operating Current | lo | mA | - | 1200 | 1300 | - |
Operating Voltage | Vf | V | - | 1.7 | 2 | Po=1000mW |
Slope Efficiency | ŋ | W/A | 0.95 | 1 | - | - |
Monitor Current | Im | uA | - | 100 | 1000 | Po=1000mW |
Beam Divergence | - | - | - | 40×12 | FWHM | |
Wavelength Temperature Coefficient | θ⊥×θ∥ dλ/dT | nm/℃ | - | 0. 3 | - | |
Emitting Area | - | µm | 80×1 | - | ||
| Pin Assignment | |||
Type | 1 | 2 | 3 | |
01 | PD Anode | LD Cathode | LD Anode/PD Cathode | |
Laser Type | Wavelength | Power | Packaging | Cap | Pin Type |
QTFPL | 808: 808nm | 1000: 1000mW | T5: TO-5 | FW: Flat Window | 1: 01 Type |